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Japan to invest $21bn in GF for 2 new US facilities

  • Mercados: Metals
  • 14/10/26

Japan plans to invest up to a total of $21bn toward US-based GlobalFoundries (GF) to build and operate two new semiconductor manufacturing facilities (fabs) in Malta, New York, the company said today.

GF expects the two fabs to each have a production capacity of 900,000 300mm wafers/yr. The first fab is expected to come on line in 2029, the company said.

In addition to the new fabs, the US Department of Commerce will also reallocate $955mn of GF's current CHIPS and Science Act award towards its existing facilities in Malta, New York, and Burlington, Vermont, for advancing its silicon photonics, silicon germanium (SiGe) and advanced packaging capabilities.

GF said in May it would expand its SiGe capacity to meet accelerating demand for optical networking in data centers, as capacity at its Vermont fabrication plant was oversubscribed.

In an additional agreement, Commerce will receive a 4pc equity stake in GF, worth over $2bn, US president Donald Trump said in a social media post on Wednesday.


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